Labelled transition systems as a Stone space

A fully abstract and universal domain model for modal transition systems and refinement is shown to be a maximal-points space model for the bisimulation quotient of labelled transition systems over a finite set of events. In this domain model we prove that this quotient is a Stone space whose compact, zero-dimensional, and ultra-metrizable Hausdorff topology measures the degree of bisimilarity such that image-finite labelled transition systems are dense. Using this compactness we show that the set of labelled transition systems that refine a modal transition system, its ''set of implementations'', is compact and derive a compactness theorem for Hennessy-Milner logic on such implementation sets. These results extend to systems that also have partially specified state propositions, unify existing denotational, operational, and metric semantics on partial processes, render robust consistency measures for modal transition systems, and yield an abstract interpretation of compact sets of labelled transition systems as Scott-closed sets of modal transition systems.Comment: Changes since v2: Metadata updat

Organic charge-transfer phase formation in thin films of the BEDT-TTF/TCNQ donor-acceptor system

We have performed charge transfer phase formation studies on the donor/acceptor system bis(ethylendithio)tetrathiafulvalene,(BEDT-TTF)/tetracyanoquinodimethane,(TCNQ) by means of physical vapor deposition. We prepared donor/acceptor bilayer structures on glass and Si(100)/SiO_2 substrates held at room temperature and analyzed the layer structures by optical microscopy, X-ray diffraction and focused ion beam cross sectioning before and after annealing. We found clear evidence for the formation of a charge transfer phase during the annealing procedure. For the as-grown samples we could not detect the occurrence of a charge transfer phase. X-ray diffraction indicated that the monoclinic variant of the (BEDT-TTF)-TCNQ was formed. This was further corroborated by single-source evaporation experiments from pre-reacted (BEDT-TTF)-TCNQ obtained from solution growth, and in particular from co-evaporation experiments of (BEDT-TTF)-TCNQ and TCNQ. In the course of these experiments we found that (0,l,l)-oriented BEDT-TTF layers can be prepared on alpha-Al_2O_3 (1,1,-2,0) substrates at about 100 C using (BEDT-TTF)-TCNQ as source material. We speculate that due to its high vapor pressure the TCNQ component serves as a carrier gas for BEDT-TTF vapor phase transport.Comment: 14 pages, 8 figures. Added new author, new section about co-evaporation technique, new references, new figure